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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11916162 B1

PDFFull Text
Date of Patent:
Feb. 27, 2024

Filed:

Oct. 28, 2020

Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

Applicant:

Wright State University, Dayton, OH (US);

Inventors:

Elliott R. Brown, Beavercreek, OH (US);

Weidong Zhang, Cary, NC (US);

Tyler Growden, Dublin, OH (US);

Paul Berger, Columbus, OH (US);

Assignee:

Wright State University, Dayton, OH (US);

Attorney:

McNees Wallace & Nurick LLC

Primary Examiner:

Xinning(Tom) Niu

Int. Cl.
CPC ...
H01S 5/34 (2006.01); B82Y 20/00 (2011.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/347 (2006.01); G01S 7/481 (2006.01); H01L 27/15 (2006.01); H01S 5/065 (2006.01); H04N 5/33 (2023.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); B82Y 20/00 (2013.01); H01L 33/0029 (2013.01); H01L 33/06 (2013.01); H01S 5/3095 (2013.01); H01S 5/34313 (2013.01); H01S 5/347 (2013.01); G01S 7/4815 (2013.01); H01L 27/15 (2013.01); H01S 5/0657 (2013.01); H04N 5/33 (2013.01);
Abstract

A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

Find Patent Forward Citations

Brown, Elliott. (2024). Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures (U.S. Patent No. 11916162). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11916162

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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