The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Dec. 17, 2022
Applicant:
Technion Research and Development Foundation Limited, Haifa, IL;
Inventors:
Hossam Haick, Haifa, IL;
Muhammad Khatib, Haifa, IL;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 29/0669 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01);
Abstract
A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 μm. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.