The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Oct. 22, 2021
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Sungjae Chang, Daejeon, KR;

Hokyun Ahn, Daejeon, KR;

Hyunwook Jung, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01);
Abstract

Provided is a compound semiconductor device. The compound semiconductor device according to embodiments of the inventive concept includes a first semiconductor layer having a fin extending in a first direction on a substrate, an upper gate electrode extending in a second direction perpendicular to the first direction on the first semiconductor layer, a second semiconductor layer disposed between a sidewall of the fin and the upper gate electrode, a dielectric layer disposed between a top surface of the fin and the upper gate electrode, and a lower gate structure connected to a bottom surface of the first semiconductor layer by passing through the substrate.


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