The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Oct. 27, 2021
Applicant:

Sanken Electric Co., Ltd., Niiza, JP;

Inventor:

Katsuyuki Torii, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 28/20 (2013.01);
Abstract

A semiconductor device may include: a drift region of a first conductivity type; a base region of a second conductivity type arranged on the drift region; an emitter region of the first conductivity type arranged on the base region; a field stop region of the first conductivity type arranged in contact with the drift region; a collector region of the second conductivity type in contact with the field stop region; a main gate electrode electrically insulated from the base region and the collector region; a control gate electrode electrically insulated from the base region and the collector region; a gate pad on the drift region; a first resistor electrically connected between the gate pad and the main gate electrode; and a second resistor electrically connected between the gate pad and the control gate electrode. A resistance value of the first resistor may be greater than the second resistor thereof.


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