The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Mar. 02, 2022
Texas Instruments Incorporated, Dallas, TX (US);
Robert M. Higgins, Plano, TX (US);
Henry Litzmann Edwards, Garland, TX (US);
Xiaoju Wu, Dallas, TX (US);
Shariq Arshad, Allen, TX (US);
Li Wang, Plano, TX (US);
Jonathan Philip Davis, Allen, TX (US);
Tathagata Chatterjee, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.