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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11916059 B1

PDFFull Text
Date of Patent:
Feb. 27, 2024

Filed:

Aug. 25, 2021

Electronic device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Schmenn, Sachsenkam, DE;

Stefan Pompl, Landshut, DE;

Damian Sojka, Regensburg, DE;

Katharina Umminger, Wenzenbach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Viering, Jentschura & Partner mbB

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 27/02 (2006.01); H01L 21/78 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/00 (2006.01); H01L 29/74 (2006.01); H02H 9/04 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 21/78 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 23/60 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0292 (2013.01); H01L 29/7416 (2013.01); H02H 9/04 (2013.01); H01L 27/0744 (2013.01); H01L 29/74 (2013.01); H01L 2224/214 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/30205 (2013.01);
Abstract

An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

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