The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Jan. 24, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Te-Yin Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76841 (2013.01); H01L 23/5252 (2013.01); H01L 23/5254 (2013.01); H01L 23/53266 (2013.01);
Abstract

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first conductive layer above the substrate, concurrently forming a bottom conductive layer and a redistribution structure above the first conductive layer, forming a programmable insulating layer on the bottom conductive layer, and forming a top conductive layer on the programmable insulating layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit. The bottom conductive layer and the redistribution structure are electrically coupled to the first conductive layer.


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