The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Nov. 15, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Takuya Hoshi, Tokyo, JP;
Yuki Yoshiya, Tokyo, JP;
Hiroki Sugiyama, Tokyo, JP;
Hideaki Matsuzaki, Tokyo, JP;
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/78 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7806 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02609 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
A first regrowth layer and a second regrowth layer comprising GaAs having high resistance are regrown on a surface of an etching stop layer exposed to the bottom of a first groove and a second groove, and then n-type InGaAs is regrown on the first regrowth layer and the second regrowth layer, whereby a source region and a drain region configured to make contact with a channel layer are formed in the first groove and the second groove respectively.