The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Mar. 06, 2022
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventors:
Chen-Chiang Liu, Hsinchu County, TW;
Hung-Kwei Liao, Taoyuan, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/373 (2006.01); H01L 27/082 (2006.01); H01L 21/763 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 23/3736 (2013.01); H01L 21/763 (2013.01); H01L 27/082 (2013.01); H01L 27/1203 (2013.01);
Abstract
A semiconductor structure including a substrate and a deep trench isolation structure is provided. The deep trench isolation structure is disposed in the substrate and is not electrically connected to any device. The deep trench isolation structure includes a heat dissipation layer and a dielectric liner layer. The heat dissipation layer is disposed in the substrate. The dielectric liner layer is disposed between the heat dissipation layer and the substrate.