The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Sep. 01, 2020
Hitachi High-tech Corporation, Tokyo, JP;
Yoshihide Yamaguchi, Tokyo, JP;
Sumiko Fujisaki, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.