The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Sep. 10, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masahiro Koike, Yokkaichi, JP;

Masao Shingu, Yokkaichi, JP;

Masaya Ichikawa, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/26 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H01L 21/822 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/8221 (2013.01); H01L 29/263 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.


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