The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Oct. 20, 2020
Applicant:

National Institute for Materials Science, Ibaraki, JP;

Inventors:

Jie Tang, Ibaraki, JP;

Shuai Tang, Ibaraki, JP;

Ta-Wei Chiu, Ibaraki, JP;

Tadakatsu Ohkubo, Ibaraki, JP;

Jun Uzuhashi, Ibaraki, JP;

Kazuhiro Hono, Ibaraki, JP;

Luchang Qin, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/02 (2006.01); H01J 1/02 (2006.01); H01J 37/30 (2006.01);
U.S. Cl.
CPC ...
H01J 9/02 (2013.01); H01J 1/02 (2013.01); H01J 37/30 (2013.01);
Abstract

The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.


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