The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Dec. 10, 2021
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Tae Hun Park, Gyeonggi-do, KR;

Dong Hun Kwak, Gyeonggi-do, KR;

Hyung Jin Choi, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/3454 (2013.01);
Abstract

A memory device includes a controller that performs a program verification after a first program pulse is applied to the at least one non-volatile memory cell. The first program pulse is applied during a data program operation and the data program operation includes applying program pulses to program multi-bit data to the at least one non-volatile memory cell. The controller also determines a program mode for the at least one non-volatile memory cell based on a result of the program verification, and changes at least one of a level of a first control voltage based on the program mode. The first control voltage is applied to a drain select line coupled to the at least one non-volatile memory cell.


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