The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Oct. 08, 2021
Wuhan University, Hubei, CN;
WUHAN UNIVERSITY, Hubei, CN;
Abstract
A reliability evaluation method and system for a microgrid inverter IGBT based on segmented long short-term memory (LSTM) is disclosed, including steps as follows. An electrothermal coupling model is constructed to obtain real-time junction temperature data. The original LSTM algorithm is improved to obtain a segmented LSTM prediction network for the aging characteristics of the IGBT. The monitoring value of the IGBT aging parameter is used to perform segmented LSTM prediction to obtain the predicted aging process, and the threshold values of different aging stages are categorized. An aging correction is performed on the aging parameter of the electrothermal coupling model to ensure the accuracy of the junction temperature data. Rainflow-counting algorithm is used to calculate real-time thermal stress load distribution of the IGBT. The fatigue damage theory and the Lesit life prediction model are combined to calculate the real-time cumulative damage and predicted life of the IGBT.