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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11910608 B1

PDFFull Text
Date of Patent:
Feb. 20, 2024

Filed:

Oct. 07, 2022

Semiconductor device and method for manufacturing same

Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Shinya Arai, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 43/40 (2023.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); G11C 16/14 (2006.01); H10B 41/35 (2023.01); H10B 41/50 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01); G11C 16/04 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/225 (2006.01); H01L 29/167 (2006.01); H01L 21/02 (2006.01); H10B 41/41 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/14 (2013.01); H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/50 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); H01L 21/0217 (2013.01); H01L 21/2257 (2013.01); H01L 21/31116 (2013.01); H01L 21/32133 (2013.01); H01L 29/167 (2013.01); H10B 41/41 (2023.02);
Abstract

According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.

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