The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Sep. 25, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yoon Young Choi, Seoul, KR;
Seung Jin Kim, Hwaseong-si, KR;
Byung-Hyun Lee, Hwaseong-si, KR;
Sang Jae Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H10B 12/00 (2023.01); G11C 5/10 (2006.01); G11C 11/402 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); G11C 5/10 (2013.01); G11C 11/4023 (2013.01); H01L 28/91 (2013.01);
Abstract
A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.