The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Dec. 08, 2020
Applicant:
Sitime Coporation, Santa Clara, CA (US);
Inventors:
Joseph C. Doll, Mountain View, CA (US);
Paul M. Hagelin, Saratoga, CA (US);
Ginel C. Hill, Sunnyvale, CA (US);
Nicholas Miller, Sunnyvale, CA (US);
Charles I. Grosjean, Los Gatos, CA (US);
Assignee:
SITIME CORPORATION, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/24 (2006.01); H10N 30/04 (2023.01); H10N 30/06 (2023.01); H10N 30/074 (2023.01); H10N 30/87 (2023.01); H03H 9/15 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02448 (2013.01); H03H 9/02362 (2013.01); H03H 9/2452 (2013.01); H10N 30/04 (2023.02); H10N 30/06 (2023.02); H10N 30/074 (2023.02); H10N 30/878 (2023.02); H03H 2003/027 (2013.01); H03H 2009/02307 (2013.01); H03H 2009/155 (2013.01);
Abstract
A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.