The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Sep. 03, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Akira Tanaka, Yokohama Kanagawa, JP;
Hideto Sugawara, Nonoichi Ishikawa, JP;
Katsufumi Kondo, Nonoichi Ishikawa, JP;
Masanobu Iwamoto, Kanazawa Ishikawa, JP;
Kenji Isomoto, Kanazawa Ishikawa, JP;
Hiroaki Ootsuka, Kanazawa Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor light-emitting device includes a substrate having a first energy bandgap, a first semiconductor layers on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer. The active layer includes a quantum well layer, and a first barrier layer between the first semiconductor layer and the quantum well layer. The first semiconductor layer has a second energy bandgap wider than the first energy bandgap. The quantum well layer has a third energy bandgap narrower than the first and second energy bandgaps. The second semiconductor layer has a fourth energy bandgap wider than the third energy bandgap. The substrate has a refractive index greater than a refractive index of the first semiconductor layer. The refractive index of the first semiconductor layer is not less than a refractive index of the first barrier layer.