The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Nov. 24, 2021
Infineon Technologies Austria Ag, Villach, AT;
Ling Ma, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a semiconductor substrate; a first gate trench and a second gate trench both extending from a first main surface of the semiconductor substrate into the semiconductor substrate; a semiconductor mesa delimited by the first and second gate trenches; and a field plate trench extending from the first main surface through the semiconductor mesa. The field plate trench includes a field plate separated from each sidewall and a bottom of the field plate trench by an air gap. The field plate is anchored to the semiconductor substrate at the bottom of the field plate trench by an electrically insulative material that occupies a space in a central part of the field plate, the electrically insulative material spanning the air gap to contact the semiconductor substrate at the bottom of the field plate trench. Methods of producing the semiconductor device are also described.