The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Aug. 22, 2019
Sumitomo Chemical Company, Limited, Tokyo, JP;
Takehiro Yoshida, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A method for manufacturing a nitride semiconductor substrate, including: a step of preparing a base substrate; a step of forming a mask layer having a plurality of openings on the main surface of the base substrate; a first step of growing a first layer whose surface is composed only of inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, wherein in the first step, at least one valley and a plurality of tops are formed at an upper side of each of the plurality of openings of the mask layer by forming a plurality of concaves on a top surface of the single crystal and making the (0001) plane disappear.