The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Jan. 14, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lan Yu, Albany, NY (US);

Benjamin D. Briggs, Clifton Park, NY (US);

Tyler Sherwood, Fonda, NY (US);

Raghav Sreenivasan, Fremont, CA (US);

Joseph Salfelder, Pleasant Valley, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/4757 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02024 (2013.01); H01L 21/02019 (2013.01); H01L 21/47573 (2013.01);
Abstract

Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.


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