The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Feb. 28, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Dong Jae Jung, Icheon-si, KR;

Sung Won Bae, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 11/10 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1044 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

The present technology relates to an electronic device. According to the present technology, a memory device may include memory cells respectively connected to a plurality of word lines, a peripheral circuit configured to perform a read operation of reading data stored in selected memory cells connected to a selected word line among the memory cells, and a read operation controller configured to control the peripheral circuit to apply a pass voltage to adjacent word lines adjacent to the selected word line during the read operation, discharge the pass voltage to a target pass voltage less than the pass voltage after a predetermined time elapses, and obtain data stored in the selected memory cells through bit lines connected to the selected memory cells after a target read time elapses, after a voltage applied to the adjacent word lines is discharged to the target pass voltage.


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