The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Sep. 23, 2021
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Reetika Kumari Agarwal, Sunnyvale, CA (US);

Abbas Komijani, Mountain View, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/575 (2006.01); G05F 1/59 (2006.01);
U.S. Cl.
CPC ...
G05F 1/575 (2013.01); G05F 1/59 (2013.01);
Abstract

Embodiments disclosed herein relate to a low-voltage dropout regulator and more specifically to improving a power supply rejection ratio (PSRR) of the low dropout voltage regulator. The low dropout voltage regulator may be used to generate various voltages for integrated circuits of an electronic device. In some cases, a P-type metal-oxide-semiconductor (PMOS) low dropout (LDO) voltage regulator may be used. However, the PMOS LDO may not provide a sufficient PSRR or reduction in supply noise. To address these issues, an N-type metal-oxide-semiconductor (NMOS) LDO voltage regulator having an NMOS pass transistor may be used. The NMOS LDO may provide a lower impedance than the PMOS LDO. Further, the NMOS LDO may provide an increased bandwidth and consume a smaller physical area than the PMOS LDO.


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