The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
May. 23, 2023
Qufu Normal University, Qufu, CN;
Xiaobing Liu, Qufu, CN;
Xiaoran Zhang, Qufu, CN;
QUFU NORMAL UNIVERSITY, Qufu, CN;
Abstract
Preparations of a highly coherent diamond nitrogen vacancy (NV) and a diamond anvil are provided. A graphite is used as a carbon source, a diamond is used as a crystal seed, aluminum/titanium is used as a nitrogen remover, and a single crystal diamond is synthesized under a high temperature and a high pressure, and high-pressure-high-temperature (HPHT) annealing is performed on the synthesized diamond; after the annealing, multiple NVs are generated in <100> and <311> crystal orientation growth regions from scratch, while native NVs in a <111> crystal orientation growth region are disappeared; and the <100> and <311> crystal orientation growth regions do not contain defects related to ferromagnetic elements. The high-density and highly coherent NVs are produced under nondestructive conditions, and the diamond anvil with controlled NVdepths are prepared to achieve a precise detection of the NVat a pressure above 60 GPa.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile