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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11905305 B1

PDFFull Text
Date of Patent:
Feb. 20, 2024

Filed:

May. 14, 2021

Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same

Applicant:

Up Chemical Co., Ltd., Pyeongtaek-si, KR;

Inventors:

Jin Sik Kim, Pyeongtaek-si, KR;

Myeong Ho Kim, Cheonan-si, KR;

Mi Hee Lee, Daegu, KR;

Byung Kwan Kim, Pyeongtaek-si, KR;

Jun Hwan Choi, Goyang-si, KR;

Sungwoo Ahn, Yangju-si, KR;

Yun Gyeong Yi, Guri-si, KR;

Assignee:

UP CHEMICAL CO., LTD., Pyeongtaek-si, KR;

Attorney:

Shih IP Law Group, PLLC.

Primary Examiner:

Alexander R Pagano

Int. Cl.
CPC ...
C07F 7/10 (2006.01); C23C 16/24 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C07F 7/10 (2013.01); C23C 16/24 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01);
Abstract

The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Find Patent Forward Citations

Kim, Jin. (2024). Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same (U.S. Patent No. 11905305). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11905305

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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