The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Dec. 10, 2021
Invensense, Inc., San Jose, CA (US);
Daesung Lee, San Jose, CA (US);
Alan Cuthbertson, San Jose, CA (US);
InvenSense, Inc., San Jose, CA (US);
Abstract
A method includes tab dicing a region of a tab region disposed between a first die and a second die. The tab region structurally connects the first die to the second die each including a MEMS device eutecticly bonded to a CMOS device. The tab region includes a handle wafer layer disposed over a fusion bond oxide layer that is disposed on an ACT layer. The tab region is positioned above a CMOS tab region that with the first and second die form a cavity therein. The tab dicing cuts through the handle wafer layer and leaves a portion of the fusion bond oxide layer underneath the handle wafer layer to form an oxide tether within the tab region. The oxide tether maintains the tab region in place and above the CMOS tab region. Subsequent to the tab dicing the first region, the tab region is removed.