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H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/126 (2023.01); H10K 77/10 (2023.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10K 102/00 (2023.01);

U.S. Cl.

CPC ...

H10K 59/1213 (2023.02); H10K 59/123 (2023.02); H10K 59/126 (2023.02); H10K 59/1216 (2023.02); H10K 77/111 (2023.02); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H10K 59/1201 (2023.02); H10K 2102/311 (2023.02);

Abstract

A display device includes: a base substrate having a display region including a first region and a second region, and a non-display region; a first semiconductor layer including polysilicon at the second region; a first conductive layer on a first insulating layer, and including a bottom gate electrode at the first region and a second-first gate electrode at the second region; a second semiconductor layer including an oxide on a second insulating layer at the first region; a second conductive layer on a third insulating layer, and including a top gate electrode at the first region and a second-second gate electrode at the second region; and a third conductive layer on a fourth insulating layer, and including a first source electrode and a first drain electrode connected to the second semiconductor layer, and a second source electrode and a second drain electrode connected to the first semiconductor layer.

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