The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 15, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Tetsuaki Utsumi, Yokohama, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H01L 25/065 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/50 (2023.01); G11C 5/04 (2006.01); H01L 23/00 (2006.01); H01L 29/792 (2006.01); H01L 21/822 (2006.01); H01L 21/28 (2006.01); G11C 29/02 (2006.01); H10B 43/40 (2023.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02); G11C 5/04 (2013.01); G11C 29/022 (2013.01); G11C 29/023 (2013.01); G11C 29/028 (2013.01); H01L 21/8221 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 29/40117 (2019.08); H01L 29/792 (2013.01); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); G11C 2029/0409 (2013.01); H01L 2224/16145 (2013.01); H01L 2225/06517 (2013.01);
Abstract

A semiconductor memory device includes a semiconductor substrate, transistors formed in an upper surface of the semiconductor substrate, a stacked body provided on the semiconductor substrate, a first contact, and a second contact. The transistors are arranged along a first direction. A minimum period of an arrangement of the transistors is a first period. The stacked body includes electrode films. A configuration of a first portion of the stacked body is a staircase-like having terraces. A first region and a second region are set along the first direction in the first portion. A length in the first direction of the terrace disposed in the second region is longer than the first period. A length in the first direction of the terrace disposed in the first region is shorter than the first period.


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