The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jan. 13, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Suhwan Lim, Hanam-si, KR;
Jaehun Jung, Seongnam-si, KR;
Sanghoon Kim, Hwaseong-si, KR;
Taehun Kim, Gwacheon-si, KR;
Seongchan Lee, Hwaseong-si, KR;
Abstract
A semiconductor device includes gate electrodes and insulating layers spaced apart from each other on a substrate and alternately stacked in a direction perpendicular to an upper surface of the substrate, and channel structures that extend through stack structures. Ones of the structures include a channel insulating layer, a pad layer on the channel insulating layer, and a channel layer. The channel layer includes a first channel region, and a second channel region including a semiconductor material having a length shorter than a length of the first channel region and having an impurity concentration of a first conductivity type and the pad layer includes a semiconductor material doped with a second conductivity type impurity. A height level of a lower surface of the second channel region is lower than a height level of a lower surface of a first erase gate electrode.