The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 25, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Vedant Sadashiv Chendake, Lengkong Tujoh, SG;

Giuseppe Bernacchia, Villach, AT;

Pablo Yelamos Ruiz, Hermosa Beach, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 5/24 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H03K 5/24 (2013.01);
Abstract

A gate charge profiler for a power transistor may include a voltage comparator unit and a timer unit. An input signal may control a gate drive current input to a gate of the power transistor to control conduction between a drain and a source of the power transistor. The voltage comparator unit may be configured to compare an input voltage and a threshold voltage, and to output a comparison signal. The input voltage may be a drain-source voltage across the drain and the source of the power transistor or a gate-source voltage across the gate and the source of the power transistor. The timer unit may be configured to output a time value based on input of a transition of the input signal and input of the comparison signal.


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