The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Dec. 23, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Bernhard Wolfgang Ruck, Freising, DE;

Ruediger Kuhn, Freising, DE;

Oliver Nehrig, Freising, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 3/158 (2006.01); H02M 3/157 (2006.01); G05F 1/46 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); G05F 1/46 (2013.01); H02M 1/0029 (2021.05); H02M 3/157 (2013.01); H02M 3/1584 (2013.01);
Abstract

A driver includes a low-resistance charging path between a supply voltage rail and a first output node, a high-resistance charging path between the supply voltage rail and the first output node, an inverter coupled to the first output node and configured to enable and disable the low-resistance charging path, and a high-resistance discharging path between the first output node and a second output node. The first output node is coupled to a control terminal of a pass gate transistor in some implementations. The low-resistance charging path charges a voltage on the first output node to a threshold voltage of the pass gate transistor, and the high-resistance charging path charges the voltage on the first output node greater than the threshold voltage of the pass gate transistor. The high-resistance discharging path discharges the voltage on the first output node.


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