The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Mar. 02, 2021
Applicant:
Lumileds Llc, San Jose, CA (US);
Inventor:
Jeffrey DiMaria, San Jose, CA (US);
Assignee:
Lumileds LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/36 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract
Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.