The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
May. 27, 2022
Applicant:
Panasonic Holdings Corporation, Kadoma, JP;
Inventors:
Daiki Watanabe, Kanagawa, JP;
Hirotaka Katayama, Osaka, JP;
Assignee:
PANASONIC HOLDINGS CORPORATION, Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0288 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); H01L 31/0376 (2006.01); H01L 31/0687 (2012.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0547 (2014.12); H01L 31/0288 (2013.01); H01L 31/0352 (2013.01); H01L 31/1804 (2013.01); H01L 31/202 (2013.01); H01L 31/03762 (2013.01); H01L 31/0687 (2013.01);
Abstract
A solar cell includes: an n-type first amorphous silicon layer provided on a first main surface of a crystalline silicon substrate; an amorphous silicon oxide layer provided on a first main surface of the first amorphous silicon layer; and an n-type fine crystal silicon layer provided on a first main surface of the amorphous silicon oxide layer. An oxygen atom concentration in the first amorphous silicon layer, the amorphous silicon oxide layer, and the fine crystal silicon layer has a maximum value in the amorphous silicon oxide layer with a thickness direction.