The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Mar. 30, 2022
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Yuta Endo, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.