The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jul. 22, 2021
Applicants:
Beihai Hkc Optoelectronics Technology Co., Ltd., Beihai, CN;
Hkc Corporation Limited, Shenzhen, CN;
Inventors:
Assignees:
BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD., Beihai, CN;
HKC CORPORATION LIMITED, Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 29/40 (2006.01); C23C 14/14 (2006.01); C23C 14/35 (2006.01); C23C 14/58 (2006.01); C23C 16/14 (2006.01); C23C 16/16 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 28/02 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); C23C 14/14 (2013.01); C23C 14/35 (2013.01); C23C 14/5873 (2013.01); C23C 16/14 (2013.01); C23C 16/16 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); C23C 28/023 (2013.01); H01L 27/1214 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01);
Abstract
The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.