The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Sep. 07, 2021
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Ljubo Radic, Gilbert, AZ (US);

Viet Thanh Dinh, Leuven, BE;

Petrus Hubertus Cornelis Magnee, Malden, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 29/0821 (2013.01); H01L 29/7375 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region. A defect layer having an upper surface formed in an upper portion of the first doped region. A second semiconductor region of a second semiconductor type is formed over the first semiconductor region.


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