The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Oct. 08, 2020
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Koichi Nishita, Nagaokakyo, JP;
Masaki Takeuchi, Nagaokakyo, JP;
Yutaka Takeshima, Nagaokakyo, JP;
Kazuhiro Inoue, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo, JP;
Abstract
A semiconductor device that includes a semiconductor substrate; a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer; a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer; a first external electrode; a second external electrode; a first lead wire led out from the first capacitance section to the first external electrode and having an inductance L; and a second lead wire led out from the second capacitance section to the second external electrode and having an inductance L, wherein an electrostatic capacity Cof the first capacitance section and an electrostatic capacity Cof the second capacitance section are different, and L/L=0.8 to 1.2.