The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Dec. 21, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Gerhard Noebauer, Villach, AT;

Florian Gasser, Moosburg, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/0646 (2013.01); H01L 29/0696 (2013.01); H01L 29/7815 (2013.01);
Abstract

In an embodiment, a semiconductor device includes: a main transistor having a load path; a sense transistor configured to sense a main current flowing in the load path of the main transistor; and a bypass diode structure configured to protect the sense transistor and electrically coupled in parallel with the sense transistor. A sense transistor cell of the sense transistor includes a sense trench and a sense mesa. The sense trench and a bypass diode trench of the bypass diode structure form a common trench. The sense mesa and a bypass diode mesa of the bypass diode structure form a common mesa.


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