The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jun. 21, 2021
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Guillaume Alexandre Blin, Carlisle, MA (US);

Aniruddha B. Joshi, Irvine, CA (US);

Christophe Masse, Andover, MA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 23/66 (2006.01); H01L 29/417 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 29/41733 (2013.01); H01L 23/3121 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 27/092 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/45099 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14215 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01);
Abstract

Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.


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