The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Feb. 19, 2019
Massachusetts Institute of Technology, Cambridge, MA (US);
Nanyang Technological University, Singapore, SG;
National University of Singapore, Singapore, SG;
Li Zhang, Singapore, SG;
Kwang Hong Lee, Singapore, SG;
Keith Cheng Yeow Ng, Singapore, SG;
Kenneth Eng Kian Lee, Singapore, SG;
Eugene A. Fitzgerald, Cambridge, MA (US);
Soo Jin Chua, Singapore, SG;
Chuan Seng Tan, Singapore, SG;
Massachusetts Institute of Technology, Cambridge, MA (US);
Nanyang Technological University, Singapore, SG;
National University of Singapore, Singapore, SG;
Abstract
Disclosed is a method of reducing surface unevenness of a semiconductor wafer (). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (). In the described embodiment, the deposited layer includes an epitaxial layer () and the protective layer includes a first dielectric layer (). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.