The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jun. 04, 2020
Applicant:
Jx Metals Corporation, Tokyo, JP;
Inventors:
Assignee:
JX METALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B28D 5/04 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02019 (2013.01); B28D 5/042 (2013.01); C30B 25/186 (2013.01); C30B 29/40 (2013.01); C30B 33/10 (2013.01); H01L 29/20 (2013.01);
Abstract
Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a WARP value of 3.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.