The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Aug. 27, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Emiri Takada, Hiratsuka Kanagawa, JP;

Naofumi Abiko, Kawasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01);
Abstract

[Problem] To provide a semiconductor storage device capable of reducing the load on a controller. [Solution] According to one embodiment, a semiconductor storage deviceincludes a memory cell arrayincluding a plurality of memory cell transistors MT, a plurality of word lines WL connected to gates of the respective memory cell arrays, a voltage generation circuitgenerating a voltage applied to each of the word lines WL, and a sequencercontrolling an operation of the memory cell array. The sequencerrepeats a loop including a program operation and a verify operation multiple times in a write operation. The sequencercontrols an operation of the voltage generation circuitso that a rate increase in a voltage applied to a non-selected word line in the verify operation of a last loop is smaller than the rate increase in the voltage applied to the non-selected word line in the verify operation of a first loop.


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