The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Dec. 22, 2017
Danmarks Tekniske Universitet, Kgs. Lyngby, DK;
Xiaolong Zhu, Kgs. Lyngby, DK;
Anders Kristensen, Frederiksberg, DK;
Niels Asger Mortensen, Kgs. Lyngby, DK;
Danmarks Tekniske Universitet, Kgs. Lyngby, DK;
Abstract
There is presented a method for geometrically modifying high-index dielectric structures on a support structure which includes steps of providing a support structure and a first plurality of high-index dielectric structures supported by the support structure. The method includes changing a geometry of the high-index dielectric structures within a second plurality of high-index dielectric structures, being a sub-set of the first plurality of high-index dielectric structures. The geometry is changed by photothermally melting some of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating them with incident electromagnetic radiation, and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures. The support structure comprises a first plurality of topographical features and the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features and holes in a high-index dielectric film.