The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2024

Filed:

Jul. 23, 2021
Applicant:

Sitime Corporation, Santa Clara, CA (US);

Inventors:

Renata M. Berger, Palo Alto, CA (US);

Ginel C. Hill, Sunnyvale, CA (US);

Paul M. Hagelin, Saratoga, CA (US);

Charles I. Grosjean, Los Gatos, CA (US);

Aaron Partridge, Cupertino, CA (US);

Joseph C. Doll, Mountain View, CA (US);

Markus Lutz, Mountain View, CA (US);

Assignee:

SiTime Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); H03H 9/02 (2006.01); H03H 9/24 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0024 (2013.01); H03H 9/02448 (2013.01); H03H 9/2405 (2013.01);
Abstract

The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 10cm, and preferably between 10cmand 10cm.


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