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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11895871 B1

PDFFull Text
Date of Patent:
Feb. 06, 2024

Filed:

May. 20, 2022

Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Takeshi Koshihara, Matsumoto, JP;

Ryoichi Nozawa, Shiojiri, JP;

Assignee:

SEIKO EPSON CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10K 50/852 (2023.01); H10K 50/856 (2023.01); H10K 59/123 (2023.01); H10K 59/35 (2023.01); H10K 50/805 (2023.01); H10K 59/12 (2023.01); H10K 50/824 (2023.01); H10K 102/00 (2023.01); H10K 59/38 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 50/00 (2023.01); H10K 50/818 (2023.01); H10K 59/30 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 50/852 (2023.02); H10K 50/856 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/35 (2023.02); H10K 59/38 (2023.02); H10K 50/00 (2023.02); H10K 50/805 (2023.02); H10K 50/818 (2023.02); H10K 50/824 (2023.02); H10K 59/1201 (2023.02); H10K 59/30 (2023.02); H10K 59/351 (2023.02); H10K 2102/3026 (2023.02); H10K 2102/341 (2023.02);
Abstract

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

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