The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Feb. 18, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hideto Takekida, Nagoya Aichi, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); H10B 41/27 (2023.01); G11C 16/04 (2006.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02); G11C 2211/561 (2013.01);
Abstract

A semiconductor storage device includes a stack, a channel layer, a first charge storage portion, and a second charge storage portion. The stack includes a plurality of conductive layers and a plurality of insulating layers, and the plurality of conductive layers and the plurality of insulating layers are alternately stacked one by one in a first direction. The channel layer extends in the first direction in the stack. The first charge storage portion is provided between the channel layer and each of the plurality of conductive layers in a second direction intersecting with the first direction. The second charge storage portion includes a portion interposed between two adjacent conductive layers in the plurality of conductive layers in the first direction.


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