The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Dec. 03, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chuan-Lin Hsiao, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H01L 21/76224 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H10B 12/053 (2023.02);
Abstract
The present disclosure provides a method for manufacturing a semiconductor device having a buried wordline. The method includes forming a first recessed portion in a first dielectric layer in a substrate; forming a second recessed portion spaced apart from the first recessed portion and in the substrate; disposing a protection layer on the substrate to cover the second recessed portion; and disposing a second dielectric layer on the first dielectric layer.