The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Aug. 05, 2020
The Royal Institution for the Advancement of Learning/mcgill University, Montréal, CA;
Nexplasmagen Inc., Montréal, CA;
THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY, Montreal, CA;
NEXPLASMAGEN INC., Montreal, CA;
Abstract
A plasma source comprising a first hollow electrode and a second hollow electrode separated by a gap and a dielectric barrier of a constant width; wherein the plasma source is configured to selectively produce a plasma in either one of a first configuration and a second configuration; wherein, i) in the first configuration, a plasma-forming gas flows in the gap while a non plasma-forming gas flows within the first hollow electrode; and ii) in the second configuration, a plasma-forming gas flows within the first hollow electrode and a non plasma-forming gas flows within the gap. The method comprises selecting at least two gases of different breakdown voltages, injecting a first gas in a first electrode separated from a second hollow electrode by a gas gap of a constant width, injecting a second gas in the gas gap under an applied power.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile