The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Apr. 16, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Shinji Sakai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/53 (2006.01); H02M 7/537 (2006.01); H03K 17/567 (2006.01); H02M 1/08 (2006.01); H02M 1/088 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H02M 1/08 (2013.01); H02M 1/088 (2013.01); H03K 17/567 (2013.01);
Abstract

A semiconductor device includes: first and second power transistors connected in parallel with each other and having different saturated currents; and a gate driver driving the first and second power transistors with individual gate voltages, respectively, the gate driver includes a drive circuit receiving an input signal and outputting a drive signal, a first amplifier amplifying the drive signal in accordance with first power voltage and supplying the amplified drive signal to a gate of the first power transistor, and a second amplifier amplifying the drive signal in accordance with second power voltage different from the first power voltage and supplying the amplified drive signal to a gate of the second power transistor.


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