The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
May. 09, 2021
Joulwatt Technology Co., Ltd., Hangzhou, CN;
Weiwei Ge, Hangzhou, CN;
JOULWATT TECHNOLOGY CO., LTD., Hangzhou, CN;
Abstract
Disclosed is a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a drift region on a substrate, a well region on the drift region, a source-end doped region in the well region, a drain-end doped region on the drift region, and a gate structure which is located between a source end and a drain end, located at a position of the well region, and forms a channel region in the well region. The source-end doped region comprises a first doped region and a second doped region with opposite doping types, the channel region connects the first doped region and the drift region. The first doped region and the second doped region of the source end are equivalently close to the gate structure, a distance between the second doped region and a PN junction surface formed by the drift region and the well region is reduced.